Effect of coherency strain on the deformation of InxGa1-xAs superlattices under nanoindentation and bending

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Bibliographic Details
Published inPhilosophical magazine (Abingdon, England) Vol. 85; no. 22; pp. 2469 - 2490
Main Authors LLOYD, S. J, P'NG, K. M. Y, CLEGG, W. J, BUSHBY, A. J, DUNSTAN, D. J
Format Journal Article
LanguageEnglish
Published Abingdon Taylor and Francis 01.08.2005
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Deformation and plasticity (including yield, ductility, and superplasticity)
Exact sciences and technology
Materials science
Mechanical and acoustical properties of condensed matter
Mechanical properties of solids
Methods of deposition of films and coatings; film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Gallium arsenides
Inorganic compounds
Misfit dislocations
Nucleation
Semiconductor materials
Ternary compounds
Nanoindentation
Twinning
Crystal growth from vapors
Plastic deformation
Experimental study
Indium arsenides
Thin films
Stress relaxation
Transmission electron microscopy
Modulation
Superlattices
Molecular beam epitaxy
Stress effects
III-V semiconductors
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ISSN:1478-6435
1478-6443
DOI:10.1080/14786430500070909