Si/Si1-xGex valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 41; no. 12; pp. 2430 - 2439
Main Authors GAN, C. H, DEL ALAMO, J. A, BENNETT, B. R, MEYERSON, B. S, CRABBE, E. F, SODINI, C. G, REIF, L. R
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.12.1994
Subjects
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon Germanides
Band structure
Semiconductor device
Semiconductor insulator contact
Diode
Silicon
Valence band
Modeling
Heterojunction
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ISSN:0018-9383
1557-9646
DOI:10.1109/16.337460