Extremely large magnetoresistance in a high-quality WTe2 grown by flux method

We have grown single crystals of WTe2 by a self-flux method and evaluated the quality of the crystals. A Hall bar-type device was fabricated from an as-exfoliated film on a Si substrate and longitudinal resistance Rxx was measured. Rxx increased with an applied perpendicular magnetic field without s...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 969; no. 1
Main Authors Tsumura, K, Yano, R, Kashiwaya, H, Koyanagi, M, Masubuchi, S, Machida, T, Namiki, H, Sasagawa, T, Kashiwaya, S
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2018
Subjects
Crystal growth
Crystals
Magnetoresistance
Magnetoresistivity
Physics
Silicon substrates
Single crystals
Van Arkel process
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Summary:We have grown single crystals of WTe2 by a self-flux method and evaluated the quality of the crystals. A Hall bar-type device was fabricated from an as-exfoliated film on a Si substrate and longitudinal resistance Rxx was measured. Rxx increased with an applied perpendicular magnetic field without saturation and an extremely large magnetoresistance as high as 376,059 % was observed at 8.27 T and 1.7 K.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/969/1/012134