Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium Substrate
Titanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron sputtering process. The obtained samples were characterized by X-ray diffraction (XRD) analysis and Raman spectroscopy, the elemental analysis was made by Energy-dispersive X-ray spectroscopy (ED...
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Published in | Journal of Nano- and Electronic Physics Vol. 9; no. 5 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English Russian Ukrainian |
Published |
Sumy Ukraine
Sumy State University, Journal of Nano - and Electronic Physics
01.01.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Titanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron sputtering process. The obtained samples were characterized by X-ray diffraction (XRD) analysis and Raman spectroscopy, the elemental analysis was made by Energy-dispersive X-ray spectroscopy (EDX). Titanium carbide (TiC) structure was obtained by deposition of sputtered carbon atoms and clusters to the resistively heated titanium substrate surface with temperatures 700 °C, 800 °C, 900 °C and 1000 °C. The XRD analysis showed that the formation of TiC structure is take place when the substrate is heated to 1000 °C. The Raman spectroscopy showed that when the incident power of laser is 100 % (35 mW) the structure is unstable in samples with the substrate temperatures 700 °C, 800 °C and 900 °C and the most stable titanium carbide structure is created when the substrate temperature is 1000 °C. |
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ISSN: | 2077-6772 2306-4277 |
DOI: | 10.21272/jnep.9(5).05045 |