Ultrasensitive UV-NIR broadband phototransistors based on AgBiS2–organic hybrid films

In recent years, AgBiS2 has received great attention in optoelectronics thanks to its fascinating merits, including a suitable bandgap, large absorption coefficient from ultraviolet to near-infrared and remarkable material stability. However, the poor carrier transport properties limit its further d...

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Bibliographic Details
Published inJournal of materials chemistry. C, Materials for optical and electronic devices Vol. 9; no. 24; pp. 7583 - 7590
Main Authors Jiang, Li, Huang, Huihuang, Gui, Fubing, Xu, Yalun, Lin, Qianqian
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 28.06.2021
Subjects
Absorptivity
Broadband
Carrier transport
Near infrared radiation
Optoelectronics
Photoconductivity
Photonic band gaps
Photosensitivity
Phototransistors
Stability
Transport properties
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Summary:In recent years, AgBiS2 has received great attention in optoelectronics thanks to its fascinating merits, including a suitable bandgap, large absorption coefficient from ultraviolet to near-infrared and remarkable material stability. However, the poor carrier transport properties limit its further development and applications. To address this issue, we propose a composite strategy to facilitate the carrier transport of AgBiS2 QD films. The AgBiS2–organic hybrid films demonstrated enhanced photoconductivity. Then, we fabricated phototransistors based on these blend films, and achieved a high photosensitivity (Ilight/Idark) of 1.5 × 103, a decent responsivity of up to 20 A W−1, an excellent specific detectivity of 4 × 1013 Jones under low UV illumination and remarkable device stability. These results again demonstrate the great potential of AgBiS2 for next generation solution-processed photodetectors.
ISSN:2050-7526
2050-7534
DOI:10.1039/d1tc01798e