300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO>6 V

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Bibliographic Details
Published inIEEE electron device letters Vol. 22; no. 8; p. 361
Main Authors Dvorak, M.W, Bolognesi, C.R, Pitts, O.J, Watkins, S.P
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.08.2001
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ISSN:0741-3106
1558-0563
DOI:10.1109/55.936343