Effects of AIGaN/GaN HEMT structure on RF reliability
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Published in | Electronics letters Vol. 41; no. 3; pp. 155 - 157 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Institution of Electrical Engineers
03.02.2005
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Subjects | |
Online Access | Get full text |
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ISSN: | 0013-5194 1350-911X |
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DOI: | 10.1049/el:20057802 |