Active RF Pulse Compression using Electrically Controlled Semiconductor Switches

In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. T...

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Bibliographic Details
Published inAIP conference proceedings Vol. 877; no. 1
Main Authors Guo Jiquan, Tantawi, Sami
Format Journal Article
LanguageEnglish
Published United States 27.11.2006
Subjects
ACCELERATORS
PARTICLE ACCELERATORS
PULSES
RF SYSTEMS
SEMICONDUCTOR SWITCHES
SILICON
TEMPERATURE RANGE 0273-0400 K
WAVEGUIDES
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Summary:In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.2409146