Proton mobility in a-SiO(2)

A model for proton mobility in a-SiO(2) is developed. Theoretical first-principles calculations are performed to test this model by obtaining pathways and activation energies for proton motion

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 46; no. 6; pp. 1574 - 1577
Main Authors Kurtz, H A, Karna, S P
Format Journal Article
LanguageEnglish
Published United States 01.12.1999
Subjects
INSTRUMENTATION
ION MOBILITY
MATERIALS SCIENCE
MATHEMATICAL MODELS
PHYSICAL RADIATION EFFECTS
PROTONS
SEMICONDUCTOR DEVICES
SILICON OXIDES
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Summary:A model for proton mobility in a-SiO(2) is developed. Theoretical first-principles calculations are performed to test this model by obtaining pathways and activation energies for proton motion
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/23.819123