Quantification of defects engineered in single layer MoS2

Atomic defects are controllably introduced in suspended single layer molybdenum disulfide (1L MoS2) using helium ion beam. Vacancies exhibit one missing atom of molybdenum and a few atoms of sulfur. Quantification was done using a Scanning Transmission Electron Microscope (STEM) with an annular dete...

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Published inRSC advances Vol. 10; no. 39; pp. 22996 - 23001
Main Authors Aryeetey, Frederick, Ignatova, Tetyana, Aravamudhan, Shyam
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 16.06.2020
The Royal Society of Chemistry
Subjects
Atomic force microscopes
Chemistry
Crystal defects
Defects
Degree of crystallinity
Helium ions
INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Ion beams
Microscopes
Molybdenum
Molybdenum disulfide
Raman spectra
Two dimensional materials
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Summary:Atomic defects are controllably introduced in suspended single layer molybdenum disulfide (1L MoS2) using helium ion beam. Vacancies exhibit one missing atom of molybdenum and a few atoms of sulfur. Quantification was done using a Scanning Transmission Electron Microscope (STEM) with an annular detector. Experimentally accessible inter-defect distance was employed to measure the degree of crystallinity in 1L MoS2. A correlation between the appearance of an acoustic phonon mode in the Raman spectra and the inter-defect distance was established, which introduces a new methodology for quantifying defects in two-dimensional materials such as MoS2.
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USDOE Office of Science (SC)
National Science Foundation (NSF)
AC05-00OR22725; ECCS-1542174; DMR-1539916
ISSN:2046-2069
2046-2069
DOI:10.1039/d0ra03372c