X-band power AlGaAs/InGaAs P-n-p HBT's

• Published in: IEEE electron device letters Vol. 14; no. 4; pp. 185 - 187
• Main Authors: HILL, D. G, TAE SEUNG KIM, HUA QUEN TSERNG
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.04.1993
• Subjects: 426000 - Engineering- Components, Electron Devices & Circuits- (1990-); ALUMINIUM ARSENIDES; ALUMINIUM COMPOUNDS; AMPLIFICATION; AMPLIFIERS; Applied sciences; ARSENIC COMPOUNDS; ARSENIDES; DATA; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; Electronics; ENGINEERING; Exact sciences and technology; EXPERIMENTAL DATA; FABRICATION; GAIN; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM ARSENIDES; INDIUM COMPOUNDS; INFORMATION; JUNCTION TRANSISTORS; MICROWAVE EQUIPMENT; NUMERICAL DATA; OPERATION; PHYSICAL PROPERTIES; PNICTIDES; POWER; POWER AMPLIFIERS; SEMICONDUCTOR DEVICES; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; TRANSISTORS; Growth from vapor; Frequency characteristic; Microelectronic fabrication; Gallium Indium Arsenides Mixed; X band; Epitaxy; Heterojunction transistor; Aluminium Gallium Arsenides Mixed; Organometallic compound; Microwave transistor; Bipolar transistor; Electrical characteristic
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.215156

AlGaAs/InGaAs P-n-p HBT's have been fabricated using carbon-doped material grown by nonarsine MOVPE. F(max) of 39 GHz and ft of 18 GHz were obtained. Operated in common-base mode, a P-n-p HBT achieved 0.5-W output power with 8-dB gain at 10 GHz; saturated output power was 0.69 W. Results are presented for devices with emitter length from 120 to 600 microns. (Author (revised))