Understanding the Role of CdTe in Polycrystalline CdSexTe1–x/CdTe-Graded Bilayer Photovoltaic Devices
Grading of bandgap by alloying CdTe with selenium to form a CdSe x Te 1– x /CdTe‐graded bilayer device has led to a device efficiency over 19%. A CdSe x Te 1– x absorber would increase the short‐circuit current due to its lower bandgap but at the expense of open‐circuit voltage. It has been demonstr...
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Published in | Solar RRL Vol. 5; no. 11 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
Wiley
01.11.2021
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Subjects | |
Online Access | Get full text |
ISSN | 2367-198X 2367-198X |
DOI | 10.1002/solr.202100523 |
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Summary: | Grading of bandgap by alloying CdTe with selenium to form a CdSe
x
Te
1–
x
/CdTe‐graded bilayer device has led to a device efficiency over 19%. A CdSe
x
Te
1–
x
absorber would increase the short‐circuit current due to its lower bandgap but at the expense of open‐circuit voltage. It has been demonstrated that adding a CdTe layer at the back of such a CdSe
x
Te
1–
x
film reduces the voltage deficit caused by the lower bandgap of absorber from selenium alloying while maintaining the higher short‐circuit current. This leads to a photovoltaic device that draws advantage from both materials with an efficiency greater than either of them. Herein, a detailed account using device data, ultraviolet photoelectron spectroscopy, electron microscopy, and first‐principles density functional theory modeling is provided, which shows that CdTe acts as an electron reflector for CdSe
x
Te
1–
x
. |
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Bibliography: | EE0008177; EE0008557; ACI-1532235; ACI-1532236 National Science Foundation (NSF) USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office University of Colorado Boulder Colorado State University |
ISSN: | 2367-198X 2367-198X |
DOI: | 10.1002/solr.202100523 |