Understanding the Role of CdTe in Polycrystalline CdSexTe1–x/CdTe-Graded Bilayer Photovoltaic Devices

Grading of bandgap by alloying CdTe with selenium to form a CdSe x Te 1– x /CdTe‐graded bilayer device has led to a device efficiency over 19%. A CdSe x Te 1– x absorber would increase the short‐circuit current due to its lower bandgap but at the expense of open‐circuit voltage. It has been demonstr...

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Bibliographic Details
Published inSolar RRL Vol. 5; no. 11
Main Authors Shah, Akash, Pandey, Ramesh, Nicholson, Anthony, Lustig, Zach, Abbas, Ali, Danielson, Adam, Walls, John, Munshi, Amit, Sampath, Walajabad
Format Journal Article
LanguageEnglish
Published United States Wiley 01.11.2021
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ISSN2367-198X
2367-198X
DOI10.1002/solr.202100523

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Summary:Grading of bandgap by alloying CdTe with selenium to form a CdSe x Te 1– x /CdTe‐graded bilayer device has led to a device efficiency over 19%. A CdSe x Te 1– x absorber would increase the short‐circuit current due to its lower bandgap but at the expense of open‐circuit voltage. It has been demonstrated that adding a CdTe layer at the back of such a CdSe x Te 1– x film reduces the voltage deficit caused by the lower bandgap of absorber from selenium alloying while maintaining the higher short‐circuit current. This leads to a photovoltaic device that draws advantage from both materials with an efficiency greater than either of them. Herein, a detailed account using device data, ultraviolet photoelectron spectroscopy, electron microscopy, and first‐principles density functional theory modeling is provided, which shows that CdTe acts as an electron reflector for CdSe x Te 1– x .
Bibliography:EE0008177; EE0008557; ACI-1532235; ACI-1532236
National Science Foundation (NSF)
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
University of Colorado Boulder
Colorado State University
ISSN:2367-198X
2367-198X
DOI:10.1002/solr.202100523