ZnO nanowall network grown by chemical vapor deposition technique
Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is fo...
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Published in | AIP conference proceedings Vol. 1665; no. 1 |
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Main Authors | , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
24.06.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls. |
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Bibliography: | ObjectType-Conference Proceeding-1 SourceType-Conference Papers & Proceedings-1 content type line 21 |
ISSN: | 0094-243X 1551-7616 |
DOI: | 10.1063/1.4917825 |