An all-implanted, self-aligned, GaAs JFET with nonalloyed W/p+-GaAs ohmic gate contact

• Published in: IEEE transactions on electron devices Vol. 41; no. 7; pp. 1078 - 1082
• Main Authors: ZOLPER, J. C, BACA, A. G, HIETALA, V. M, SHUL, R. J, HOWARD, A. J, RIEGER, D. J, SHERWIN, M. E, LOVEJOY, M. L, HJALMARSON, H. P, DRAPER, B. L, KLEM, J. F
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.07.1994
• Subjects: Applied sciences; ARSENIC COMPOUNDS; ARSENIDES; DESIGN; DOPED MATERIALS; ELECTRONIC CIRCUITS; Electronics; ENGINEERING; Exact sciences and technology; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; GATING CIRCUITS; ION IMPLANTATION; JUNCTIONS; MATERIALS; OPERATION; PNICTIDES; SEMICONDUCTOR DEVICES; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SEMICONDUCTOR JUNCTIONS; Transistors; TRANSISTORS 426000 > Engineering > Components, Electron Devices & Circuits > (1990-); Gallium Arsenides; Field effect transistor; Ohmic contact; Semiconductor metal contact; Tungsten; Transistor gate; P type semiconductor; Electric contact; Electrical characteristic; Production process
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.293333

The authors describe a self-aligned, refractory metal gate contact, enhancement mode, GaAs junction field effect transistor (JFET) where all impurity doping was done by ion implantation. Processing conditions are presented for realizing a high gate turn on voltage ([approximately]1.0 V at 1 mA/mm of gate current) relative to GaAs MESFET's. The high gate turn-on voltage is the result of optimizing the p+-gate implant and anneal to achieve a nonalloyed ohmic contact between the implanted p[sup +]-GaAs and the sputter deposited tungsten gate contact. Initial nominally 1.0 [mu]m [times] 50 [mu]m n-JFET's have a transconductance of 85 mS/mm and f[sub t] of 11.4 GHz.