Trifluoromethylsulfonyl-based salts of BEDT-TTF: Crystal and electronic structures and physical properties

Three 2 : 1 salts of the organic donor molecule bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF or ET) with trifluoromethylsulfonyl-based anions N(SO{sub 2}CF{sub 3}){sub 2}{sup -}, CH(SO{sub 2}CF{sub 3}){sub 2}{sup -} and C(SO{sub 2}CF{sub 3}){sub 3}{sup -} were prepared by electrocrystallization....

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Published inJournal of solid state chemistry Vol. 168; no. 2; pp. 524 - 534
Main Authors SCHLUETER, John A, GEISER, Urs, GARD, Gary L, MONTGOMERY, Lawrence K, KOO, H.-J, WHANGBO, M.-H, HAU WANG, H, KINI, Aravinda M, WARD, Brian H, PARAKKA, James P, DAUGHERTY, Roxanne G, KELLY, Margaret E, NIXON, Paul G, WINTER, Rolf W
Format Journal Article
LanguageEnglish
Published San Diego, CA Elsevier 01.11.2002
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Summary:Three 2 : 1 salts of the organic donor molecule bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF or ET) with trifluoromethylsulfonyl-based anions N(SO{sub 2}CF{sub 3}){sub 2}{sup -}, CH(SO{sub 2}CF{sub 3}){sub 2}{sup -} and C(SO{sub 2}CF{sub 3}){sub 3}{sup -} were prepared by electrocrystallization. These salts were characterized by single-crystal X-ray diffraction, electron spin resonance (ESR) spectroscopy, electrical resistivity measurements and electronic band structure calculations. (ET){sub 2}N(SO{sub 2}CF{sub 3}){sub 2} is a two-dimensional (2D) metal, but its ESR spin susceptibility above 150 K shows a weakly semiconducting behavior, presumably because during ESR measurements the sample cooling rate is slow hence allowing the disordered anions to readjust their positions. (ET){sub 2}N(SO{sub 2}CF{sub 3}){sub 2} is a 2D metal and undergoes a metal-to-insulator (MI) transition at 110 K due probably to a geometry change of the donor molecule layers. (ET){sub 2}N(SO{sub 2}CF{sub 3}){sub 3} is a one-dimensional (1D) metal and undergoes an MI between 180 and 240 K, which is expected to be of charge density wave type.
Bibliography:ANL/MSD/JA-41752
USDOE Office of Science (SC)
National Science Foundation (NSF)
OUS
DE-AC02-06CH11357
ISSN:0022-4596
1095-726X
DOI:10.1006/jssc.2002.9750