XPS와 SIMS를 이용한 PSG/SiO₂/Al-1%Si 적층 박막내의 Na 게터링 분석

• Published in: Biuletyn Uniejowski Vol. 49; no. 5; pp. 467 - 471
• Main Author: 김진영(Jin Young Kim)
• Format: Journal Article
• Language: Korean
• Published: 한국표면공학회 01.10.2016
• Subjects: 기계공학; Segregation gettering; SIMS; XPS; Na; PSG
• ISSN: 1225-8024; 2299-8403; 2288-8403
• DOI: 10.5695/JKISE.2016.49.5.467

In order to investigate the Na gettering, PSG/SiO2/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/SiO2 passivations, respectively. Heat treatment was carried out at 300oC for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/SiO2/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/SiO2 interface and at the SiO2/Al-1%Si interfaces. Na impurity gettering in PSG/ SiO2/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be SiO2. KCI Citation Count: 0