A 76-mm2 8-Mb chain ferroelectric memory

[...] a ferroelectric capacitor overdrive scheme enables sufficient polarization switching, without overbias memory cell array.

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 36; no. 11; p. 1713
Main Authors Takashima, D, Takeuchi, Y, Miyakawa, T, Itoh, Y, Ogiwara, R, Kamoshida, M, Hoya, K, Doumae, S.M, Ozaki, T, Kanaya, H, Yamakawa, K, Kunishima, I, Oowaki, Y
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.11.2001
Subjects
Random access memory
Semiconductors
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Summary:[...] a ferroelectric capacitor overdrive scheme enables sufficient polarization switching, without overbias memory cell array.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.962293