DEPOSITION OF Cr-DOPED SrZrO3 THIN FILMS ON Si SUBSTRATES AND THEIR RESISTANCE SWITCHING CHARACTERISTICS

Oxide materials such as Cr-doped SrZrO3 have attracted considerable attention recently owing to their resistive switching characteristics and possibility of random access memory (RAM) applications. Cr-doped SrZrO3 is considered to be a suitable candidate for high-density resistive RAM (ReRAM) device...

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Published inJournal of Ceramic Processing Research Vol. 12; no. 3; pp. 233 - 235
Main Authors Yang, M K, Park, J-W, Choi, S Y, Lee, J-K
Format Journal Article
LanguageEnglish
Published 세라믹연구소 2011
Subjects
Chromium
Deposition
Electrodes
Random access memory
Silicon substrates
Strontium zirconates
Switching
Thin films
재료공학
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Summary:Oxide materials such as Cr-doped SrZrO3 have attracted considerable attention recently owing to their resistive switching characteristics and possibility of random access memory (RAM) applications. Cr-doped SrZrO3 is considered to be a suitable candidate for high-density resistive RAM (ReRAM) devices. Cr-doped SrZrO3 perovskite thin films were deposited on SrRuO3 bottom electrode/SiO2/Si(100) substrates by pulsed laser deposition. The SrZrO3:Cr perovskite and SrRuO3 bottom electrode showed a well controlled interface, as well as good resistive switching behaviour with an ON/OFF ratio > 1000. Resistive switching memory devices made from Cr-doped SrZrO3 thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.
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G704-001111.2011.12.3.004
ISSN:1229-9162
2672-152X