CRYSTALLISATION AND ANISOTROPIC DIELECTRIC PROPERTIES OF TANTALUM OXIDE THIN FILMS
Thin films of tantalum pentoxide, suitable for high-k dielectric gate oxides in integrated circuits, were studied by TEM. The atomic-layer-deposited material is amorphous, crystallising into the orthorhombic (L) phase after annealing in the temperature range 750-850 C. In-situ TEM allows the kinetic...
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| Published in | Journal of Ceramic Processing & Research Vol. 6; no. 1; pp. 17 - 19 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
세라믹연구소
01.01.2005
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| Subjects | |
| Online Access | Get full text |
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| Summary: | Thin films of tantalum pentoxide, suitable for high-k dielectric gate oxides in integrated circuits, were studied by TEM. The atomic-layer-deposited material is amorphous, crystallising into the orthorhombic (L) phase after annealing in the temperature range 750-850 C. In-situ TEM allows the kinetics of the reaction to be established in detail. A combination of TEM and focused ion beam techniques was used to determine the capacitance of individual crystallites of known orientation, whereupon it was established that the property differences were less than 10% for orthogonal orientations. 10 refs. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 G704-001111.2005.6.1.006 |
| ISSN: | 1229-9162 2672-152X |