Performance Improvement in Polymer‐based Thin Film Transistors Using Modified Bottom‐contact Structures with Etched SiO2 Layers

Polymer‐based thin film transistors (TFTs) with a modified bottom‐contact structure and etched SiO2 layer were developed and investigated. An increase in the field‐effect mobility in the developed TFTs compared to TFTs with a normal bottom‐contact structure was ascertained. A bottom‐contact structur...

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Published inBulletin of the Korean Chemical Society Vol. 38; no. 2; pp. 224 - 227
Main Authors Park, Jeong‐Woo, You, Young‐Jun, Shim, Jae Won
Format Journal Article
LanguageEnglish
Published Weinheim Wiley‐VCH Verlag GmbH & Co. KGaA 01.02.2017
대한화학회
Subjects
Bottom‐contact structure
Etched SiO2 dielectric layer
Field‐effect mobility
Polymer‐based thin film transistors
화학
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Abstract Polymer‐based thin film transistors (TFTs) with a modified bottom‐contact structure and etched SiO2 layer were developed and investigated. An increase in the field‐effect mobility in the developed TFTs compared to TFTs with a normal bottom‐contact structure was ascertained. A bottom‐contact structure and the photolithographic processing method were used to ensure that the developed TFTs were suitable for commercial applications. Increased mobility of the modified bottom‐contact structure was attributed to direct contact of the Au electrode with the active polymer layer.
AbstractList Polymer-based thin film transistors (TFTs) with a modified bottom-contact structure and etched SiO2 layer were developed and investigated. An increase in the field-effect mobility in the developed TFTs compared to TFTs with a normal bottom-contact structure was ascertained. A bottom-contact structure and the photolithographic processing method were used to ensure that the developed TFTs were suitable for commercial applications. Increased mobility of the modified bottom-contact structure was attributed to direct contact of the Au electrode with the active polymer layer. KCI Citation Count: 0
Polymer‐based thin film transistors (TFTs) with a modified bottom‐contact structure and etched SiO2 layer were developed and investigated. An increase in the field‐effect mobility in the developed TFTs compared to TFTs with a normal bottom‐contact structure was ascertained. A bottom‐contact structure and the photolithographic processing method were used to ensure that the developed TFTs were suitable for commercial applications. Increased mobility of the modified bottom‐contact structure was attributed to direct contact of the Au electrode with the active polymer layer.
Author Shim, Jae Won
Park, Jeong‐Woo
You, Young‐Jun
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Snippet Polymer‐based thin film transistors (TFTs) with a modified bottom‐contact structure and etched SiO2 layer were developed and investigated. An increase in the...
Polymer-based thin film transistors (TFTs) with a modified bottom-contact structure and etched SiO2 layer were developed and investigated. An increase in the...
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StartPage 224
SubjectTerms Bottom‐contact structure
Etched SiO2 dielectric layer
Field‐effect mobility
Polymer‐based thin film transistors
화학
Title Performance Improvement in Polymer‐based Thin Film Transistors Using Modified Bottom‐contact Structures with Etched SiO2 Layers
URI https://onlinelibrary.wiley.com/doi/abs/10.1002%2Fbkcs.11069
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