Performance Improvement in Polymer‐based Thin Film Transistors Using Modified Bottom‐contact Structures with Etched SiO2 Layers

• Published in: Bulletin of the Korean Chemical Society Vol. 38; no. 2; pp. 224 - 227
• Main Authors: Park, Jeong‐Woo, You, Young‐Jun, Shim, Jae Won
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley‐VCH Verlag GmbH & Co. KGaA 01.02.2017; 대한화학회
• Subjects: Bottom‐contact structure; Etched SiO2 dielectric layer; Field‐effect mobility; Polymer‐based thin film transistors; 화학
• ISSN: 1229-5949; 0253-2964; 1229-5949
• DOI: 10.1002/bkcs.11069

Polymer‐based thin film transistors (TFTs) with a modified bottom‐contact structure and etched SiO2 layer were developed and investigated. An increase in the field‐effect mobility in the developed TFTs compared to TFTs with a normal bottom‐contact structure was ascertained. A bottom‐contact structure and the photolithographic processing method were used to ensure that the developed TFTs were suitable for commercial applications. Increased mobility of the modified bottom‐contact structure was attributed to direct contact of the Au electrode with the active polymer layer.