ELECTRICAL PROPERTIES OF THE MULTILAYERED PZT/BaTiO3/PZT THICK FILMS

• Published in: Journal of Ceramic Processing & Research Vol. 9; no. 1; pp. 6 - 9
• Main Authors: Nam, S-P, Lee, S-G, Lee, Y-H
• Format: Journal Article
• Language: English
• Published: 세라믹연구소 01.02.2008
• Subjects: 재료공학
• ISSN: 1229-9162; 2672-152X

Multilayered PZT/BaTiO3/PZT thick/thin/thick films were fabricated by two different methods - thick films of Pb1.1(Zr0.52Ti0.48)O3 by a screen printing method on an alumina substrate electrode with Pt, thin films of BaTiO3 by a spin-coating method with PZT thick films and once more thick films of the PZT by a screen printing method on the BaTiO3 layer. The effect of phase, composition, and interfacial state of the BaTiO3 thin film layers at the interface between the PZT thick films was investigated. The structural and the dielectric properties were investigated for the effect of various stacking sequences of sol-gel prepared BaTiO3 layers at the interface of the PZT thick films. The insertion of the BaTiO3 interlayer yielded PZT thick films with homogeneous and dense grain structures regardless of the number of BaTiO3 layers. These results suggested that there is coexistence of the PZT phase and the BaTiO3 phase or the presence of a modified BaTiO3 at the interfaces between the PZT thick films. The leakage current density of a multilayered PZT-7 film was less than 1.5 x 10 exp(-9) A/cm2 at 5 V. 11 refs.