640 x 512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

• Published in: IEEE journal of quantum electronics Vol. e 43; no. 3; pp. 230 - 237
• Main Authors: Gunapala, Sarath D., Bandara, Sumith V., Hill, Cory J., Ting, David Z., Liu, John K., Rafol, Sir B., Blazejewski, Edward R., Mumolo, Jason M., Keo, Sam A., Krishna, Sanjay, Chang, Y. -C., Shott, Craig A.
• Format: Journal Article
• Language: English
• Published: Jet Propulsion Laboratory Institute of Electrical and Electronics Engineers 01.03.2007
• Subjects: Applied sciences; Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors; Electronics; Exact sciences and technology; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques; Instrumentation And Photography; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Quantum Dots (qds); Infrared Detector; Focal Plane Array; Infrared detectors; Focal plane arrays; Gallium arsenides; Radiation detectors; Quantum dots; Ternary compounds; Binary compounds; Photodetectors; Experimental study; Response functions; Imagery; Quantum yield; Reflection grating; Indium arsenides; Detectivity; Quantum dot devices; quantum dots (QDs); infrared detector; Focal plane array; Pixel
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2006.889645

Epitaxially grown self-assembled. InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45 degrees and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 micrometers, with peak detectivity reaching approximately 1 X 10(exp 10) Jones at 77 K. The devices were fabricated into the first long-wavelength 640 x 512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature.