Fabrication of highly-oriented β-Ga2O3 thin film on ZnO/AlOx-buffered cyclo-olefin polymer substrate by excimer laser annealing at room temperature

• Published in: Japanese Journal of Applied Physics Vol. 62; no. 4; p. 048003
• Main Authors: Ryoya Kai, Oga, Tomoaki, Watanabe, Kazuki, Kaneko, Satoru, Matsuda, Akifumi, Yoshimoto, Mamoru
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese Journal of Applied Physics 01.04.2023
• Subjects: Buffer layers; Crystallization; Electron diffraction; Excimer lasers; Excimers; Gallium oxides; Krypton fluoride lasers; Laser beam annealing; Polymers; Polyolefins; Pulsed laser deposition; Pulsed lasers; Room temperature; Substrates; Thin films; X ray reflection; Zinc oxide
• ISSN: 0021-4922; 1347-4065
• DOI: 10.35848/1347-4065/accc63

The fabrication of highly-oriented β-Ga2O3 thin films on cyclo-olefin polymer (COP) substrates with oxide-buffer layers of amorphous AlOx and c-axis-oriented crystalline ZnO by excimer laser annealing at RT was investigated. An amorphous GaOx thin film deposited on a COP substrate by pulsed laser deposition at RT was irradiated with a pulsed KrF excimer laser from the film surface at RT in air. X-ray diffraction, reflection-high-energy-electron diffraction, and high-resolution transmission-electron microscopy results revealed solid-state crystallization of the uniaxial-oriented β-Ga2O3 (2¯01) thin film on the ZnO/AlOx-buffered COP substrate. The obtained β-Ga2O3 thin film exhibited green-, blue-, and UV-band cathode-luminescence.