EFFECT OF DEPOSITION TEMPERATURE ON ELECTRO-OPTICAL PROPERTIES OF SnO2 THIN FILMS FABRICATED BY A PECVD METHOD

• Published in: Journal of Ceramic Processing & Research Vol. 8; no. 1; pp. 59 - 63
• Main Authors: Lee, J-H, Jang, G-E, Yoon, D-H, Son, S-H
• Format: Journal Article
• Language: English
• Published: 세라믹연구소 01.01.2007
• Subjects: 재료공학
• ISSN: 1229-9162; 2672-152X

Thin films of tin oxide were prepared on glass substrates by plasma-enhanced CVD using dibutyltin diacetate precursor and substrate temperatures of 275-425 C. The resulting films consisted of tetragonal polycrystalline SnO2, the crystallinity increasing with increasing deposition temperature. The films deposited at 275 C were of high resistivity (0.107 Ohm.cm) and low optical transmittance (69.78%). Films deposited at temperatures above 325 C were of a compact microstructure and high density, with electrical resistivity values of approximately 0.01 Ohm.cm and optical transmission values of 80-85% over most of the visible spectrum. The films deposited over the temperature range 325-425 C were also of small grain size and low surface roughness, and it was concluded that the optimum deposition temperature was 325 C. 12 refs.