Atomic Layer Deposition of HfO₂ Films on Ge

• Published in: Applied Science and Convergence Technology Vol. 23; no. 1; pp. 40 - 43
• Main Authors: Young Joon Cho, Hyo Sik Chang
• Format: Journal Article
• Language: English
• Published: 한국진공학회(ASCT) 2014; 한국진공학회
• Subjects: 물리학; HfO; GeO; Annealing; Atomic layer deposition; Growth; Ge
• ISSN: 1225-8822; 2288-6559
• DOI: 10.5757/ASCT.2014.23.1.40

We investigated the growth characteristics and interfacial properties of HfO2 films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of HfO2 grown on a GeO2/Ge substrate through ALD is similar to that grown on an SiO2/Si substrate. However, the incubation period of HfO2 deposition on Ge is shorter than that on Si. The HfO2 grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at 700oC. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device. KCI Citation Count: 0