ZnO/Ti/ZnO 박막의 결정성 및 전기광학적 완성도 개선 연구

• Published in: Biuletyn Uniejowski Vol. 56; no. 2; pp. 147 - 151
• Main Authors: 장진규(Jin-Kyu Jang), 김유성(Yu-Sung Kim), 이연학(Yeon-Hak Lee), 최진영(Jin-Young Choi), 이인식(In-Sik Lee), 김대욱(Dae-Wook Kim), 차병철(Byung-Chul Cha), 공영민(Young-Min Kong), 김대일(Daeil Kim)
• Format: Journal Article
• Language: Korean
• Published: 한국표면공학회 2023
• Subjects: 기계공학; AFM; ZnO; XRD; Ti; Figure of merit
• ISSN: 1225-8024; 2299-8403; 2288-8403
• DOI: 10.5695/JSSE.2023.56.2.147

Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films. From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10-11 Ω-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10-5 Ω-1.