플루오라이트 구조 강유전체 박막의 분극 반전 동역학 리뷰

• Published in: Biuletyn Uniejowski Vol. 53; no. 6; pp. 330 - 342
• Main Authors: 김세현(Se Hyun Kim), 박근형(Keun Hyeong Park), 이은빈(Eun Been Lee), 유근택(Geun Taek Yu), 이동현(Dong Hyun Lee), 양건(Kun Yang), 박주용(Ju Yong Park), 박민혁(Min Hyuk Park)
• Format: Journal Article
• Language: Korean
• Published: 한국표면공학회 2020
• Subjects: 기계공학; ferroelectric; domain dynamics; polarization switching kinetics; hafnia; semiconductor devices
• ISSN: 1225-8024; 2299-8403; 2288-8403

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.