Copper 함량에 따른 Mo-Cu-N 박막의 미세구조 변화에 대한 연구

• Published in: Biuletyn Uniejowski Vol. 43; no. 6; pp. 266 - 271
• Main Authors: 신정호(Jung Ho Shin), 최광수(Kwang Soo Choi), 왕계민(Qi Min Wang), 김광호(Kwang Ho Kim)
• Format: Journal Article
• Language: Korean
• Published: 한국표면공학회 2010
• Subjects: 기계공학; Physical vapor deposition; Microstructure; X-ray photoelectron spectroscopy; Mo-Cu-N film
• ISSN: 1225-8024; 2299-8403; 2288-8403

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${\gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $\delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${\gamma}-Mo_2N$ and $\delta$-MoN surrounded by amorphous $Cu_3N$ phase.