대기압 유전체배리어방전으로 합성 및 산화 처리된 SiOxCy(-H) 박막의 부식방지 특성

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO2-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was...

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Published inBiuletyn Uniejowski Vol. 53; no. 5; pp. 201 - 206
Main Authors 김기택(Gi-Taek Kim), 김윤기(Yoon Kee Kim)
Format Journal Article
LanguageKorean
Published 한국표면공학회 2020
Subjects
기계공학
Polymerization
Anti-corrosion
Dielectric barrier discharge
Chemical vapor deposition
Silicon dioxide
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Summary:A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO2-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO2-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).
Bibliography:KISTI1.1003/JNL.JAKO202032860595610
ISSN:1225-8024
2299-8403
2288-8403