상온에서 증착된 IGZO 박막의 열처리 온도에 따른 특성

• Published in: Biuletyn Uniejowski Vol. 47; no. 4; pp. 181 - 185
• Main Authors: 이석열(Seok-ryeol Lee), 이경택(Kyong-taik Lee), 김재열(Jae-yeal Kim), 양명수(Myoung-su Yang), 강인병(In-byeong Kang), 이호성(Ho-seong Lee)
• Format: Journal Article
• Language: Korean
• Published: 한국표면공학회 2014
• Subjects: 기계공학; R.F. magnetron sputtering; IGZO film; annealing; magnetron sputtering; R; F
• ISSN: 1225-8024; 2299-8403; 2288-8403
• DOI: 10.5695/JKISE.2014.47.4.181

We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a room-temperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and $600^{\circ}C$ and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at $600^{\circ}C$ were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at $600^{\circ}C$. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600oC. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.