알곤 이온빔 입사각에 따른 Polyethylene Naphthalate 필름 표면의 자가나노구조화 분석

Ion beam irradiation induces self-organization of nanostructure on the surface of polymer film. We show that the incident angle of Ar ions on polyethylene naphthalate(PEN) film changes self-organized nanostructure. PEN film was irradiated by argon ion beams with the ion incident angle of 0°, 30°, 45...

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Published inBiuletyn Uniejowski Vol. 53; no. 3; pp. 116 - 123
Main Authors 조경환(Gyeonghwan Joe), 양준영(Junyeong Yang), 변은연(Eun-Yeon Byeon), 박영배(Young-Bae Park), 정성훈(Sunghoon Jung), 김도근(Do-Geun Kim), 이승훈(Seunghun Lee)
Format Journal Article
LanguageKorean
Published 한국표면공학회 2020
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ISSN1225-8024
2299-8403
2288-8403

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Abstract Ion beam irradiation induces self-organization of nanostructure on the surface of polymer film. We show that the incident angle of Ar ions on polyethylene naphthalate(PEN) film changes self-organized nanostructure. PEN film was irradiated by argon ion beams with the ion incident angle of 0°, 30°, 45°, 60°, and 80°. Nanostructure was altered from dimple to ripple structure as the angle increases. The ripple structure changed to pillar structure after 60°due to that the shallow incident angle increased the ion energy transfer per depth up to 50 eV/Å, which value could induce excessive surface heating and oligomer formation reacting as a physical mask for anisotropic etching. And quantitative analysis of the nanostructures was adapted by using ABC model and fractal dimension theory.
AbstractList Ion beam irradiation induces self-organization of nanostructure on the surface of polymer film. We show that the incident angle of Ar ions on polyethylene naphthalate(PEN) film changes self-organized nanostructure. PEN film was irradiated by argon ion beams with the ion incident angle of 0°, 30°, 45°, 60°, and 80°. Nanostructure was altered from dimple to ripple structure as the angle increases. The ripple structure changed to pillar structure after 60°due to that the shallow incident angle increased the ion energy transfer per depth up to 50 eV/Å, which value could induce excessive surface heating and oligomer formation reacting as a physical mask for anisotropic etching. And quantitative analysis of the nanostructures was adapted by using ABC model and fractal dimension theory. KCI Citation Count: 0
Ion beam irradiation induces self-organization of nanostructure on the surface of polymer film. We show that the incident angle of Ar ions on polyethylene naphthalate(PEN) film changes self-organized nanostructure. PEN film was irradiated by argon ion beams with the ion incident angle of 0°, 30°, 45°, 60°, and 80°. Nanostructure was altered from dimple to ripple structure as the angle increases. The ripple structure changed to pillar structure after 60°due to that the shallow incident angle increased the ion energy transfer per depth up to 50 eV/Å, which value could induce excessive surface heating and oligomer formation reacting as a physical mask for anisotropic etching. And quantitative analysis of the nanostructures was adapted by using ABC model and fractal dimension theory.
Author 정성훈(Sunghoon Jung)
김도근(Do-Geun Kim)
박영배(Young-Bae Park)
이승훈(Seunghun Lee)
조경환(Gyeonghwan Joe)
양준영(Junyeong Yang)
변은연(Eun-Yeon Byeon)
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DocumentTitleAlternate Effect of Argon Ion Beam Incident Angle on Self-Organized Nanostructure on the Surface of Polyethylene Naphthalate Film
DocumentTitle_FL Effect of Argon Ion Beam Incident Angle on Self-Organized Nanostructure on the Surface of Polyethylene Naphthalate Film
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Keywords Masking by oligomer
Ion beam
Polymer
Nanostructure
Quantitative measurement
Self-organized
Surface treatment
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Snippet Ion beam irradiation induces self-organization of nanostructure on the surface of polymer film. We show that the incident angle of Ar ions on polyethylene...
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Title 알곤 이온빔 입사각에 따른 Polyethylene Naphthalate 필름 표면의 자가나노구조화 분석
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