Ozone Assisted-MOCVD로 제작된 산화주석막의 전기적 광학적 특성

• Published in: Biuletyn Uniejowski Vol. 31; no. 2; pp. 109 - 116
• Main Authors: 배정운(J. W. Bae), 이상운(S. W. Lee), 송국현(K. H. Song), 박정일(J. I. Park), 박광자(K. J. Park), 염근영(G. Y. Yeom)
• Format: Journal Article
• Language: Korean
• Published: 한국표면공학회 1998
• ISSN: 1225-8024; 2299-8403

Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{\circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}\Omega$cm, and the mobiiity from 10 to $14\textrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}\Omega$cm, and the mobility from 14 to $19\textrm{cm}^2$/Vs.