The Phase Transition with Electric Field in Ternary Chalcogenide Thin Films
Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm....
Saved in:
| Published in | Transactions on electrical and electronic materials Vol. 5; no. 5; pp. 185 - 188 |
|---|---|
| Main Authors | , , , |
| Format | Journal Article |
| Language | Korean |
| Published |
한국전기전자재료학회
01.10.2004
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1229-7607 2092-7592 |
Cover
| Abstract | Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of AI. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased. |
|---|---|
| AbstractList | Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of Al. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased. KCI Citation Count: 1 Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of AI. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased. |
| Author | Yang, Sung-Jun Lee, Jae-Min Shin, Kyung Chung, Hong-Bay |
| Author_xml | – sequence: 1 fullname: Yang, Sung-Jun – sequence: 2 fullname: Lee, Jae-Min – sequence: 3 fullname: Shin, Kyung – sequence: 4 fullname: Chung, Hong-Bay |
| BackLink | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001014791$$DAccess content in National Research Foundation of Korea (NRF) |
| BookMark | eNotkFtLwzAYhoNMcM79h9wI3hRy6CG5HGPVucFEeh_S5Mv60ZpCUxD_vcV59Vy8J3gfySqOEe7IWjAtsqrQYkXWXAidVSWrHsg2JWwZ4zxXPC_W5NR0QD86m4A2k40JZxwj_ca5o4cB3DyhozXC4ClG2sAU7fRD950d3HiFiH6JdYtS4_CVnsh9sEOC7T83pKkPzf4tO19ej_vdOetLKTPvQQhplS7b4CvIc6UDB8UKrUruhAsq5MEWGsqqBem8cpW3ZashhMCCA7khL7faOAXTOzSjxT9eR9NPZvfZHI0q2LK1WJ9v1h7TjCb6NJj33ekiGMs518stWknB5C9ulVnn |
| ContentType | Journal Article |
| DBID | JDI ACYCR |
| DEWEY | 621.3 620.1 |
| DatabaseName | KoreaScience Korean Citation Index |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| DocumentTitleAlternate | The Phase Transition with Electric Field in Ternary Chalcogenide Thin Films |
| EISSN | 2092-7592 |
| EndPage | 188 |
| ExternalDocumentID | oai_kci_go_kr_ARTI_850633 JAKO200411922998320 |
| GroupedDBID | -EM .UV 406 9ZL AAFGU AAHNG AATNV AAYFA ABDZT ABECU ABFGW ABFTV ABKAS ABKCH ABMQK ABTEG ABTKH ACBMV ACBRV ACBYP ACHSB ACIGE ACIPQ ACOKC ACTTH ACVWB ACWMK ADMDM ADOXG ADRFC ADURQ ADYFF AEFTE AESKC AESTI AEVTX AFNRJ AGDGC AGGBP AGJBK AGMZJ AIAKS AILAN AIMYW AITGF AJDOV AJZVZ AKQUC ALMA_UNASSIGNED_HOLDINGS AMKLP AMXSW AXYYD BGNMA DPUIP EBLON EBS EJD FINBP FNLPD FSGXE HZB IKXTQ IWAJR J-C JDI JZLTJ KOV LLZTM M4Y NPVJJ NQJWS NU0 O9J OK1 PT4 RNS RSV SNE SNPRN SOHCF SOJ SRMVM SSLCW STPWE UOJIU UTJUX VEKWB VFIZW Z7X ZMTXR 0R~ AACDK AAJBT AASML ABAKF ABDBE ACAOD ACDTI ACPIV ACYCR ACZOJ AEFQL AEMSY AGQEE AIGIU AYFIA FIGPU ROL SJYHP |
| ID | FETCH-LOGICAL-k633-dde223a896bfd7e4489f1e8059861c2cf8f4fa59e67be3cd8c7da6b9efff0fce3 |
| ISSN | 1229-7607 |
| IngestDate | Sun Mar 09 07:55:32 EDT 2025 Fri Dec 22 11:58:47 EST 2023 |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 5 |
| Keywords | GeSbTe Chalcogenide Nonvolatile memory AsSbTe Phase-change |
| Language | Korean |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-k633-dde223a896bfd7e4489f1e8059861c2cf8f4fa59e67be3cd8c7da6b9efff0fce3 |
| Notes | KISTI1.1003/JNL.JAKO200411922998320 G704-001065.2004.5.5.002 |
| OpenAccessLink | http://click.ndsl.kr/servlet/LinkingDetailView?cn=JAKO200411922998320&dbt=JAKO&org_code=O481&site_code=SS1481&service_code=01 |
| PageCount | 4 |
| ParticipantIDs | nrf_kci_oai_kci_go_kr_ARTI_850633 kisti_ndsl_JAKO200411922998320 |
| PublicationCentury | 2000 |
| PublicationDate | 2004-10 |
| PublicationDateYYYYMMDD | 2004-10-01 |
| PublicationDate_xml | – month: 10 year: 2004 text: 2004-10 |
| PublicationDecade | 2000 |
| PublicationTitle | Transactions on electrical and electronic materials |
| PublicationTitleAlternate | Transactions on electrical and electronic materials |
| PublicationYear | 2004 |
| Publisher | 한국전기전자재료학회 |
| Publisher_xml | – name: 한국전기전자재료학회 |
| SSID | ssib001148145 ssib044763212 ssib053376749 ssib039560196 ssj0000314789 |
| Score | 1.575833 |
| Snippet | Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been... |
| SourceID | nrf kisti |
| SourceType | Open Website Open Access Repository |
| StartPage | 185 |
| SubjectTerms | 전기공학 |
| Title | The Phase Transition with Electric Field in Ternary Chalcogenide Thin Films |
| URI | http://click.ndsl.kr/servlet/LinkingDetailView?cn=JAKO200411922998320&dbt=JAKO&org_code=O481&site_code=SS1481&service_code=01 https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001014791 |
| Volume | 5 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| ispartofPNX | Transactions on Electrical and Electronic Materials, 2004, 5(5), , pp.185-188 |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1bb9MwFLa6PcEDGjcxLpOR8NOUKbZz82OaZhotBR6KNJ6iXOwta5VKXfsAD_wp_iDHjptkCKSBVEXWUeI4Pl99zvHlOwi9Y8wNIqqoU4SycjzJpZNHgjlepWiYQ3wQcn12eP4xuPjiTS_9y9Ho52DX0m5bnJXf_3iu5H-0CjLQqz4l-w-a7SoFAZRBv3AFDcP13jr-fA12qOUoN7uv2pnV1GS3qcvTc71DTU9qLPTE30ZzGeercg1V1pU0WTvhlpWlLL8Z2K_2wINZTJC2MksrMMicA-5u-517vZE0IbFLhE_SCRGCRBOSjsnYhV-__NRcOdNdc_o1t1bTHPWXzhza8kF2QJt922my8GtLDb6fmfC6PW4tlsyLfCISksZk7JN4YtsQeUYS6bf3koSIlAjXFuJENy_mJEr29QhTiEEyGK8ZE04YtIlzz6SRMRewFvptij07LtM2L5A18bTNJHiXffs3q3iHf3tZ1tnVOltuMogy3mea5Y_zA3TAqR5a5z_S3gOF8HKwUMt1-El7RkPPg_Gc9R4lONuaTUl004I6m0BoEjd2nwZhk44lavB-mo0aeD-LI_TIhi04bjH4GI2W6yfo4YDM8imaARqxQSPu0Yg1GvEejdigEdcNtmjEQzRijUZs0PgMLc7TRXLh2FQdzhJ6wgEbCW4m_MmDQlWhhJBfKCojV5P_05KVKlKeyn0hg7CQXNNRhFUeFEIqpVxVSv4cHTbrRr5AmHm8pLniUViCc88LUXgqiFgFz4mc8eAYnZjeyJrqdpVN49knDT0KgQo4VmCe3GP0FrrJqOyvqnt5j3teoQc9qF-jw-1mJ9-AA7otTozKfwFMj3fw |
| linkProvider | ISSN International Centre |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=The+Phase+Transition+with+Electric+Field+in+Ternary+Chalcogenide+Thin+Films&rft.jtitle=Transactions+on+electrical+and+electronic+materials&rft.au=%EC%A0%95%ED%99%8D%EB%B0%B0&rft.au=Sung-Jun+Yang&rft.au=Jae-Min+Lee&rft.au=Kyung+Shin&rft.date=2004-10-01&rft.pub=%ED%95%9C%EA%B5%AD%EC%A0%84%EA%B8%B0%EC%A0%84%EC%9E%90%EC%9E%AC%EB%A3%8C%ED%95%99%ED%9A%8C&rft.issn=1229-7607&rft.eissn=2092-7592&rft.spage=185&rft.epage=188&rft.externalDBID=n%2Fa&rft.externalDocID=oai_kci_go_kr_ARTI_850633 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1229-7607&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1229-7607&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1229-7607&client=summon |