The Phase Transition with Electric Field in Ternary Chalcogenide Thin Films

Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm....

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Bibliographic Details
Published inTransactions on electrical and electronic materials Vol. 5; no. 5; pp. 185 - 188
Main Authors Yang, Sung-Jun, Lee, Jae-Min, Shin, Kyung, Chung, Hong-Bay
Format Journal Article
LanguageKorean
Published 한국전기전자재료학회 01.10.2004
Subjects
전기공학
GeSbTe
Chalcogenide
Nonvolatile memory
AsSbTe
Phase-change
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Summary:Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of AI. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased.
Bibliography:KISTI1.1003/JNL.JAKO200411922998320
G704-001065.2004.5.5.002
ISSN:1229-7607
2092-7592