고상 성장법을 이용한 실리콘 태양전지 에미터 형성 연구

• Published in: Current Photovoltaic Research Vol. 3; no. 3; pp. 80 - 84
• Main Authors: 김현호(Hyunho Kim), 지광선(Kwang-Sun Ji), 배수현(Soohyun Bae), 이경동(Kyung Dong Lee), 김성탁(Seongtak Kim), 박효민(Hyomin Park), 이헌민(Heon-Min Lee), 강윤묵(Yoonmook Kang), 이해석(Hae-Seok Lee), 김동환(Donghwan Kim)
• Format: Journal Article
• Language: Korean
• Published: 한국태양광발전학회 2015
• Subjects: Rapid thermal process; Emitter; Silicon solar cell; Solid-phase epitaxy; Crystallization
• ISSN: 2288-3274; 2508-125X

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).