Polymer Dielectrics and Orthogonal Solvent Effects for High-Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors

We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic field-effect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in p...

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Bibliographic Details
Published inETRI journal Vol. 33; no. 6; pp. 887 - 896
Main Authors Baeg, Kang-Jun, Khim, Dong-Yoon, Jung, Soon-Won, Koo, Jae-Bon, You, In-Kyu, Nah, Yoon-Chae, Kim, Dong-Yu, Noh, Yong-Young
Format Journal Article
LanguageKorean
Published 한국전자통신연구원 01.12.2011
ETRI
Subjects
OFET
solvent
Inkjet-printing
dielectric
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Summary:We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic field-effect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits.
Bibliography:KISTI1.1003/JNL.JAKO201155735560347
ISSN:1225-6463
2233-7326