Compact 2.5 Gb/s Burst-Mode Receiver with Optimum APD Gain for XG-PON1 and GPON Applications

This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 ${\mu}m$ SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfyin...

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Bibliographic Details
Published inETRI journal Vol. 31; no. 5; pp. 622 - 624
Main Authors Kim, Jong-Deog, Le, Quan, Lee, Mun-Seob, Yoo, Hark, Lee, Dong-Soo, Park, Chang-Soo
Format Journal Article
LanguageKorean
Published 한국전자통신연구원 05.02.2009
ETRI
Subjects
Burst-mode receiver
GPON
XG-PON1
monolithic amplifier IC
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Summary:This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 ${\mu}m$ SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.
Bibliography:KISTI1.1003/JNL.JAKO200971242948806
ISSN:1225-6463
2233-7326