액상플루오르카본전구체(Liquid Fluorocarbon Precursor)의 기화를 이용한 흡착 및 회수

PFC gas is primarily used during the etching process in the manufacture of ULSIs and in cleaning after CVD processes. PFC is classified as a greenhouse gas that stays in the atmosphere for a long time and has a high GWP. High capacity and high integration have been achieved in recent years as semico...

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Published in대한금속·재료학회지, 58(6) Vol. 58; no. 6; pp. 397 - 402
Main Authors 박준영, Junyoung Park, 오병문, Byoungmoon Oh, 김경남, Kyongnam Kim
Format Journal Article
LanguageKorean
Published 대한금속재료학회 05.06.2020
대한금속·재료학회
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ISSN1738-8228
2288-8241
DOI10.3365/KJMM.2020.58.6.397

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Summary:PFC gas is primarily used during the etching process in the manufacture of ULSIs and in cleaning after CVD processes. PFC is classified as a greenhouse gas that stays in the atmosphere for a long time and has a high GWP. High capacity and high integration have been achieved in recent years as semiconductor device structures have been replaced by vertical layer structures, and the consumption of PFC gas has exploded due to the increase in high aspect ratio and patterning processes. Therefore, many researchers have been working on methods to decompose, recover, and reuse the gas after the etching process to reduce the emissions of PFC gas. In this study, etching and recovery processes were performed using C 5 F 8 in L-FC which is in liquid phase at room temperature. Among the L-FCs, C 5 F 8 gas has a high C/F ratio, similar to that of the C 4 F 8 gas, which is a conventional PFC gas. In addition, to confirm its reusability, the recovered C 5 F 8 was injected back into the chamber, and the electron temperature, plasma density, and ion energy distribution were analyzed. Based on these experimental data, the reliability of the etch processes performed with recovered C 5 F 8 gas was evaluated, and the possibility of reusing the recovered C 5 F 8 gas was confirmed. (Received March 27, 2020; Accepted April 14, 2020)
Bibliography:The Korean Institute of Metals and Materials
ISSN:1738-8228
2288-8241
DOI:10.3365/KJMM.2020.58.6.397