이리듐이 첨가된 니켈실리사이드의 적외선 흡수 특성

• Published in: 대한금속·재료학회지, 46(11) Vol. 46; no. 11; pp. 755 - 761
• Main Authors: 윤기정, Ki Jeong Yoon, 송오성, Oh Sung Song, 한정조, Jeung Jo Han
• Format: Journal Article
• Language: Korean
• Published: 대한금속재료학회 01.12.2008; 대한금속·재료학회
• Subjects: absorbance; infrared rays; Ir-inserted nickel silicide; silicide; 재료공학
• ISSN: 1738-8228; 2288-8241

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of 300~1,200℃ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.