Strain-Induced Dewetting of Germanium Layers on Silicon

Ge and SiGe layers deposited on Si are unstable due to their lattice strain. At high temperatures they undergo dewetting, leading to their segregation into the structures with different surface morphologies. The process depends on the crystallographic Si substrate orientation, chemical composition,...

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Published inPHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES p. 1
Main Author SHKLYAEV, A. A.
Format Book Chapter
LanguageEnglish
Published World Scientific 2015
WORLD SCIENTIFIC
Subjects
Nanodevices
Nanostructures & Micro
NANOTECHNOLOGY
Online AccessGet full text
ISBN9789814696517
981469651X
9789814696524
9814696528
9789814696531
9814696536
DOI10.1142/9789814696524_0100

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Abstract Ge and SiGe layers deposited on Si are unstable due to their lattice strain. At high temperatures they undergo dewetting, leading to their segregation into the structures with different surface morphologies. The process depends on the crystallographic Si substrate orientation, chemical composition, and thickness of deposited layers. We study the surface morphologies using scanning tunneling microscopy (STM) and scanning electron microscopy (SEM).
AbstractList Ge and SiGe layers deposited on Si are unstable due to their lattice strain. At high temperatures they undergo dewetting, leading to their segregation into the structures with different surface morphologies. The process depends on the crystallographic Si substrate orientation, chemical composition, and thickness of deposited layers. We study the surface morphologies using scanning tunneling microscopy (STM) and scanning electron microscopy (SEM).
Author Gaponenko S. V
Kam C. H
Gurin V. S
Borisenko V. E
Author_xml – sequence: 1
  givenname: A. A.
  surname: SHKLYAEV
  fullname: SHKLYAEV, A. A.
BookMark eNqdkD9PwzAUxI0ACSj9AkwZWQLPif_EAwMqUCpVAql0tmzHBpPUrpxA1W9PSmFiYzq9u_u94c7QUYjBInSB4QpjUlwLXokKEyYYLYgEDHCAxoOJWQWYVgTD4ff9W8L8BI277h1giGlZVvwU8UWflA_5LNQfxtbZnd3YvvfhNYsum9q0UsF_rLK52trUZTFkC996E8M5Onaq7ez4R0do-XD_MnnM50_T2eR2nje4pC53WDsnoCbcEF4XzFIsjFIalCbYMWYKR0HXQEBXxgk9dLUAbhkDpx24coRu9n83MbV1Z7wNvXfeSB1j00kMcjeF_DuF1MnbHc__xw_k5Z5sQvy0rVwnv1JpK82bWvc2yaYHWD5TviDlF9MedEc
ContentType Book Chapter
Copyright 2015
World Scientific Publishing Co. Pte. Ltd.
Copyright_xml – notice: 2015
– notice: World Scientific Publishing Co. Pte. Ltd.
DOI 10.1142/9789814696524_0100
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
Discipline Physics
EISBN 9781680158410
1680158414
9789814696524
9814696528
9789814696531
9814696536
Editor Kam, C H
Gaponenko, S V
Borisenko, V E
Gurin, V S
Editor_xml – sequence: 1
  givenname: V E
  surname: Borisenko
  fullname: Borisenko, V E
  organization: Belarusian State University of Informatics and Radioelectronics
– sequence: 2
  givenname: S V
  surname: Gaponenko
  fullname: Gaponenko, S V
  organization: B I Stepanov Institute of Physics
– sequence: 3
  givenname: V S
  surname: Gurin
  fullname: Gurin, V S
  organization: Belarusian State University
– sequence: 4
  givenname: C H
  surname: Kam
  fullname: Kam, C H
  organization: NTU
EndPage 1
ExternalDocumentID 10.1142/9789814696524_0100
chapter_kt00UP57S4
GroupedDBID 20A
38.
9WS
AABBV
AAHPH
AATMT
AAWZI
ABCYV
ABVLP
ACRES
ACZWY
ADSVC
AKHFR
ALMA_UNASSIGNED_HOLDINGS
AZZ
BBABE
CMZ
CZZ
J-X
JJU
KU3
MYL
PD5
PD7
PYZUL
TD3
WMAQA
ABMRC
ID FETCH-LOGICAL-k135f-f1bff90d47c47d26e519caab0ab41f66c2f50bd040b8cf9bf90b907e660fbf0f3
IEDL.DBID KU3
ISBN 9789814696517
981469651X
9789814696524
9814696528
9789814696531
9814696536
IngestDate Sat Mar 15 04:50:36 EDT 2025
Sat Nov 23 14:02:56 EST 2024
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MeetingName International Conference Nanomeeting - 2015
MergedId FETCHMERGED-LOGICAL-k135f-f1bff90d47c47d26e519caab0ab41f66c2f50bd040b8cf9bf90b907e660fbf0f3
PageCount 1
ParticipantIDs worldscientific_books_10_1142_9789814696524_0100_brief
worldscientific_books_10_1142_9789814696524_0100
knovel_primary_chapter_kt00UP57S4
PublicationCentury 2000
PublicationDate 2015
20150600
PublicationDateYYYYMMDD 2015-01-01
2015-06-01
PublicationDate_xml – year: 2015
  text: 2015
PublicationDecade 2010
PublicationSubtitle PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING - 2015
PublicationTitle PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES
PublicationYear 2015
Publisher World Scientific
WORLD SCIENTIFIC
Publisher_xml – name: World Scientific
– name: WORLD SCIENTIFIC
SSID ssj0001553387
ssib045672602
Score 1.4601846
Snippet Ge and SiGe layers deposited on Si are unstable due to their lattice strain. At high temperatures they undergo dewetting, leading to their segregation into the...
SourceID worldscientific
knovel
SourceType Enrichment Source
Publisher
StartPage 1
SubjectTerms Nanodevices
Nanostructures & Micro
NANOTECHNOLOGY
TableOfContents 100.1 Introduction 100.2 Experimental Detail 100.3 Strain-Induced Ge Segregation on Si 100.4 Anisotropy of Lateral Ge Growth on Si(111) Caused by Si-Ge Lattice Strain Acknowledgments References
Title Strain-Induced Dewetting of Germanium Layers on Silicon
URI https://app.knovel.com/hotlink/pdf/rcid:kpPCANPICR/id:kt00UP57S4/physics-chemistry-applications/strain-induced-dewetting?kpromoter=Summon
https://www.worldscientific.com/doi/10.1142/9789814696524_0100
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwzV1Lb9QwEB61BSSKxKutujyqIHF14038SLggtFBaoNWKZaUVlyh-qavQZNXNgsQ_4K_wKxnHhJZygRtHR87InkzGM-OZ-QCeZjoz2rqUCGslYSbxgSaLjquTmRsqzpIO6_D4RBxO2ZsZn63Bt74WxoNbVXXz2X7q1PRp0_qLzHhhXOxBZp9Vi_Hoxcn4aPQ-9qOW0umYywmLQyBgSXSPk0Z-uwFedogLBP1c5Jghxn6xXV7x82rRpb2h2ISw0zpcQxNE-l_m7TS9CNdwtIsyGVr25D5ulgs-9Ih_vwazviaHJfGlSQkr0OdBlX897GsTbnfNUEPBo88HunSgHdyB7z0rQh5Ltb9q1b7-eqVL5H_Bq7twy1dkRL5UAp_egzVb34cb40B-C-QkUDoKlKKXPaWocdFrf_LU89VZ9K703kXU1NFkjqto6m2YHrz6MDokP_EgSDVMuSMoO87l1DCpmTSJsGh96rJUtFRs6ITQieNUGVRLKtMuVzhXoe9vhaBOOerSHdiom9ruQiSEk4xpwzMvjiVTKpVM25zqXKeJ5gN4EjhbLELTj0KHPRYXbBwAvfIhC-8YLYtQ650UfwrBAMS_vlKo87l1D_5iPQ_hJlpzPMSHHsFGe76yj9FiatUerI-OP-51Ev0DNqYb6g
linkProvider Knovel
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=bookitem&rft.title=PHYSICS%2C+CHEMISTRY+AND+APPLICATIONS+OF+NANOSTRUCTURES&rft.au=SHKLYAEV%2C+A.+A.&rft.atitle=STRAIN-INDUCED+DEWETTING+OF+GERMANIUM+LAYERS+ON+SILICON&rft.date=2015-06-01&rft.pub=WORLD+SCIENTIFIC&rft.isbn=9789814696524&rft.spage=406&rft.epage=409&rft_id=info:doi/10.1142%2F9789814696524_0100&rft.externalDBID=n%2Fa&rft.externalDocID=10.1142%2F9789814696524_0100
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=https%3A%2F%2Fcontent.knovel.com%2Fcontent%2FThumbs%2Fthumb8607.gif
http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=https%3A%2F%2Fwww.worldscientific.com%2Faction%2FshowCoverImage%3Fdoi%3D10.1142%2F9789814696524_0100