Strain-Induced Dewetting of Germanium Layers on Silicon

Ge and SiGe layers deposited on Si are unstable due to their lattice strain. At high temperatures they undergo dewetting, leading to their segregation into the structures with different surface morphologies. The process depends on the crystallographic Si substrate orientation, chemical composition,...

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Bibliographic Details
Published inPHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES p. 1
Main Author SHKLYAEV, A. A.
Format Book Chapter
LanguageEnglish
Published World Scientific 2015
WORLD SCIENTIFIC
Subjects
Nanodevices
Nanostructures & Micro
NANOTECHNOLOGY
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Summary:Ge and SiGe layers deposited on Si are unstable due to their lattice strain. At high temperatures they undergo dewetting, leading to their segregation into the structures with different surface morphologies. The process depends on the crystallographic Si substrate orientation, chemical composition, and thickness of deposited layers. We study the surface morphologies using scanning tunneling microscopy (STM) and scanning electron microscopy (SEM).
ISBN:9789814696517
981469651X
9789814696524
9814696528
9789814696531
9814696536
DOI:10.1142/9789814696524_0100