Efficient TM/TE Polarization Mode Tuning in p-AlGaAs/GaAsP/n-AlGaAs Diode Nanostructures by Uniaxial Compression

Numerical calculations of the optical gain of TM and TE polarization modes in strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs double heterostructures of different quantum well widths (from 40 to 200 Å) and phosphor contents (y = 0-0.20) were performed for different values of the external uniaxial compr...

Full description

Saved in:
Bibliographic Details
Published inPHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES p. 1
Main Authors BOGDANOV, E. V., KUBASHEVSKIY, E. P., MININA, N. Ya
Format Book Chapter
LanguageEnglish
Published World Scientific 2015
WORLD SCIENTIFIC
Subjects
Nanodevices
NANOSTRUCTURE BASED DEVICES
Nanostructures & Micro
Nanotechnology
Online AccessGet full text

Cover

More Information
Summary:Numerical calculations of the optical gain of TM and TE polarization modes in strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs double heterostructures of different quantum well widths (from 40 to 200 Å) and phosphor contents (y = 0-0.20) were performed for different values of the external uniaxial compression along [110], [100] and [001] directions. The results of calculations demonstrate the possibility of the effective TM/TE tuning and switching by uniaxial compression along [100] and [110] directions in A3B5 zinc-blende light emitting diodes with "light hole up configuration" of quantized levels in a quantum well.
ISBN:9789814696517
981469651X
9789814696524
9814696528
9789814696531
9814696536
DOI:10.1142/9789814696524_0138