Fe와 Hexamethyldisilabutane를 이용한 SiC 나노로드의 성장

• Published in: Biuletyn Uniejowski Vol. 36; no. 3; pp. 234 - 241
• Main Authors: 노대호(Rho Dae-Ho), 김재수(Kim Jae-Soo), 변동진(Byun Dong-Jin), 양재웅(Yang Jae-Woong), 김나리(Kim Na-Ri)
• Format: Journal Article
• Language: Korean
• Published: 한국표면공학회 2003
• Subjects: 기계공학; CVD; SiC; VLS; HMDS; Nanorod; Fe
• ISSN: 1225-8024; 2299-8403; 2288-8403

SiC nanorod was synthesized directly on Si substrate using hexamethyldisilabutane and Fe catalyst with (111) direction. Fe acted a liquid catalyst at growth condition. Grown SiC nanorod has about 30nm diameter and $5{\mu}m$ length. SiC nanorod growth was divided by trro regions with diameter distribution. This diameter distribution were occurred by surface deposition at as - grown nanorod's surface by limitation of growth rate. At higher temperature, these division not occurred. Growth temperature and flow rates affected diameter and morphology of nanorods. With increasing flow rate of source gas, nanorod's diameter increased because of deactivation effect. Case of the increasing temperature, growth rate increased so deactivation did not occurred.