Influence of Sputtering Gas Pressure on c-Axis Orientation and Surface Morphology of ZnO Thin Film

ZnO thin films were formed by a reactive RF magnetron sputtering technique. A study was made on the influence of sputtering gas pressure and substrate temperature on the c-axis orientation and surface morphology of ZnO thin film under the condition of constant deposi-tion rate. Concerning the surfac...

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Bibliographic Details
Published inOyo Buturi Vol. 50; no. 11; pp. 1131 - 1137
Main Authors MIURA, Michiyori, ASHIDA, Sakichi
Format Journal Article
LanguageJapanese
Published The Japan Society of Applied Physics 10.11.1981
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Summary:ZnO thin films were formed by a reactive RF magnetron sputtering technique. A study was made on the influence of sputtering gas pressure and substrate temperature on the c-axis orientation and surface morphology of ZnO thin film under the condition of constant deposi-tion rate. Concerning the surface morphology and the substrate temperature dependence of the c-axis orientattion, a difference was found between the ZnO thin films formed below the sputtering gas pressure of 7×10-2 Torr and those formed above the pressure of 7×10-2 Torr. It is difficult to form the normally c-axis oriented ZnO thin film below 7×10-2 Torr.
ISSN:0369-8009
2188-2290
DOI:10.11470/oubutsu1932.50.1131