Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

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Bibliographic Details
Published inAdvances in Natural Sciences: Nanoscience and Nanotechnology Vol. 8; p. 035016
Main Authors Adison Nopparuchikun, Nathaporn Promros, Phongsaphak Sittimart, Peeradon Onsee, Asanlaya Duangrawa, Sakmongkon Teakchaicum, Tomohiro Nogami, Tsuyoshi Yoshitake
Format Journal Article
LanguageJapanese
Published IOP Publishing 26.07.2017
Subjects
Analytical Chemistry (journal)
Atmospheric temperature range
Atomic and Molecular Physics, and Optics
Atomic Layer Deposition
Atomic Layer Deposition Technology
Chemistry
Chromatography
Current density
Electrical and Electronic Engineering
Engineering
FOS: Electrical engineering, electronic engineering, information engineering
FOS: Nanotechnology
Heterojunction
Materials Chemistry
Materials Science
Meteorology
Nanocrystalline material
Nanotechnology
Optoelectronics
Physical Sciences
Physics
Physics and Astronomy
Physics and Chemistry of Schottky Barrier Height
Porous Silicon Nanoparticles and Nanostructures
Pulsed laser deposition
Quantum mechanics
Thin film
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ISSN:2043-6262
DOI:10.60692/cvvhe-0ze71