Nonvolatile ferroelectric random access memory

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Bibliographic Details
Published inOyo Buturi Vol. 69; no. 9; pp. 1080 - 1084
Main Authors ARIMOTO, Yoshihiro, ESHITA, Takashi
Format Journal Article
LanguageJapanese
Published The Japan Society of Applied Physics 10.09.2000
Subjects
barrier metal
chemical solution deposition
ferroelectric random access memory
metal ferroelectric metal insulator silicon
nonvolatile memory
planer capacitor
stack capacitor
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ISSN:0369-8009
2188-2290
DOI:10.11470/oubutsu1932.69.1080