Sentary: Selective Nucleation Based Epitaxy over Amorphous Substrates

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Bibliographic Details
Published inOyo Buturi Vol. 57; no. 9; pp. 1387 - 1392
Main Authors YONEHARA, Takao, NISHIGAKI, Yuji, MIZUTANI, Hidemasa
Format Journal Article
LanguageJapanese
Published The Japan Society of Applied Physics 10.09.1988
Subjects
chemical vapor deposition
field effect transistor
focused ion beam
grain boundary
nucleation site
selective nucleation
silicon
silicon nitride
silicon oxide
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ISSN:0369-8009
2188-2290
DOI:10.11470/oubutsu1932.57.1387