Precision laser slicing technology for single-crystal SiC wafer 1st report : Study on slicing method considering kerf-loss
We developed a precision laser slicing technology for single-crystal SiC. To reduce kerf-loss, the mechanism underlying laser mark formation inside the wafer was determined. The laser marks consist of amorphous modified parts and cleavages formed a periodic serrated shape along the off-angle. This p...
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Published in | Journal of the Japan Society for Abrasive Technology Vol. 64; no. 12; pp. 635 - 642 |
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Main Authors | , , |
Format | Journal Article |
Language | Japanese |
Published |
Tokyo
The Japan Society for Abrasive Technology
01.12.2020
Japan Science and Technology Agency |
Subjects | |
Online Access | Get full text |
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