Precision laser slicing technology for single-crystal SiC wafer 1st report : Study on slicing method considering kerf-loss

• Published in: Journal of the Japan Society for Abrasive Technology Vol. 64; no. 12; pp. 635 - 642
• Main Authors: YAMADA, Yohei, IKEDA, Tomohiro, IKENO, Junichi
• Format: Journal Article
• Language: Japanese
• Published: Tokyo The Japan Society for Abrasive Technology 01.12.2020; Japan Science and Technology Agency
• Subjects: Cleavage; Kerf; kerf-loss; laser slicing; Lasers; semiconductor; SiC; Single crystals; Slicing

We developed a precision laser slicing technology for single-crystal SiC. To reduce kerf-loss, the mechanism underlying laser mark formation inside the wafer was determined. The laser marks consist of amorphous modified parts and cleavages formed a periodic serrated shape along the off-angle. This p...