Precision laser slicing technology for single-crystal SiC wafer 1st report : Study on slicing method considering kerf-loss

We developed a precision laser slicing technology for single-crystal SiC. To reduce kerf-loss, the mechanism underlying laser mark formation inside the wafer was determined. The laser marks consist of amorphous modified parts and cleavages formed a periodic serrated shape along the off-angle. This p...

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Bibliographic Details
Published inJournal of the Japan Society for Abrasive Technology Vol. 64; no. 12; pp. 635 - 642
Main Authors YAMADA, Yohei, IKEDA, Tomohiro, IKENO, Junichi
Format Journal Article
LanguageJapanese
Published Tokyo The Japan Society for Abrasive Technology 01.12.2020
Japan Science and Technology Agency
Subjects
Cleavage
Kerf
kerf-loss
laser slicing
Lasers
semiconductor
SiC
Single crystals
Slicing
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Summary:We developed a precision laser slicing technology for single-crystal SiC. To reduce kerf-loss, the mechanism underlying laser mark formation inside the wafer was determined. The laser marks consist of amorphous modified parts and cleavages formed a periodic serrated shape along the off-angle. This phenomenon is caused by interference of laser reflection on the cleavage, resulting in increased laser absorption. Therefore, excess off-angle cleavage growth occurred resulted in increased kerf-loss. Slicing experiments with SiC wafers were carried out taking this mechanism into consideration, and precision laser slicing with kerf-loss < 36 μm was achieved.
ISSN:0914-2703
1880-7534
DOI:10.11420/jsat.64.635