Precision laser slicing technology for single-crystal SiC wafer 1st report : Study on slicing method considering kerf-loss
We developed a precision laser slicing technology for single-crystal SiC. To reduce kerf-loss, the mechanism underlying laser mark formation inside the wafer was determined. The laser marks consist of amorphous modified parts and cleavages formed a periodic serrated shape along the off-angle. This p...
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Published in | Journal of the Japan Society for Abrasive Technology Vol. 64; no. 12; pp. 635 - 642 |
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Main Authors | , , |
Format | Journal Article |
Language | Japanese |
Published |
Tokyo
The Japan Society for Abrasive Technology
01.12.2020
Japan Science and Technology Agency |
Subjects | |
Online Access | Get full text |
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Summary: | We developed a precision laser slicing technology for single-crystal SiC. To reduce kerf-loss, the mechanism underlying laser mark formation inside the wafer was determined. The laser marks consist of amorphous modified parts and cleavages formed a periodic serrated shape along the off-angle. This phenomenon is caused by interference of laser reflection on the cleavage, resulting in increased laser absorption. Therefore, excess off-angle cleavage growth occurred resulted in increased kerf-loss. Slicing experiments with SiC wafers were carried out taking this mechanism into consideration, and precision laser slicing with kerf-loss < 36 μm was achieved. |
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ISSN: | 0914-2703 1880-7534 |
DOI: | 10.11420/jsat.64.635 |